GaN-on-SiC RF and Microwave Power Transistors for the Latest Pulsed Radar System Designs

Elkay Electromech > Products & Services > News > GaN-on-SiC RF and Microwave Power Transistors for the Latest Pulsed Radar System Designs
Posted by: admin.elkay February 24, 2021 No Comments

Integra’s gallium nitride on silicon carbide (GaN-on-SiC, GaN/SiC) HEMT RF Power Transistor devices are the latest in RF and microwave power transistor technology. They deliver high gain and high power levels from UHF through C-band microwave frequencies, and their silicon carbide (SiC) substrate offers excellent heat extraction for long term reliability and optimal power density. This suite of solid-state RF Power Transistors includes models offering up to 77% power efficiency and up to 1200 W of power. They are ideally suited for high power amplifier (HPA) design in pulsed radar applications, including commerical air-traffic control (ATC) and military systems.